Heterojunction bipolar transistor is a very common device in RF and microwave circuits. We have a strong experience in HBT characterization and modeling.
A good model has two principals qualities:
- it describes precisely the device behavior
- it presents a good convergence in strong nonlinear simulation
We can reach these two characteristics with an electrothermal model based on device physics.
Thermal impedance characterization can be reached from low frequency AC measurements.
This kind of model was successfully used in 40 GHz oscillator design,
or in 60 GHz two-stage power amplifier.
